7Semi UCC21330 Dual-channel Isolated Gate Driver Breakout Board
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7Semi UCC21330 Dual-channel Isolated Gate Driver Breakout Board The 7Semi UCC21330 Dual-Channel Isolated Gate Driver Breakout Board is designed to efficiently drive power transistors like MOSFETs, IGBTs, and SiC devices with a peak source current of 4A and a peak sink current of 6A. Its 3kVRMS isolation barrier ensures safe and reliable operation in high-voltage environments, while programmable dead-time control allows precise timing adjustments to minimize switching losses and prevent shoot-through. Integrated protection features, including undervoltage lockout (UVLO) and a disable function, safeguard your system and enable immediate shutdown when needed. This compact breakout board is perfect for applications such as motor drives, power converters, and industrial automation systems requiring precise and reliable gate driving. Features: Supports dual low-side, dual high-side, and half-bridge configurations for a wide range of power applications. High Current Capacity: 4A peak source and 6A peak sink output provide robust transistor control. Enhanced Protection: All power supplies include UVLO protection and a configurable dead time for safe operation. Precision timing is achieved with a 33ns mean propagation latency and a maximum pulse-width distortion of 5ns. Robust CMTI operation: Common-mode transient immunity of more than 125V/ns enables dependable operation in high-noise settings. Fast Disable Logic: The built-in disable feature allows you to shut down both outputs at the same time.
- Dual-channel isolated gate driver breakout for MOSFETs, IGBTs, and SiC devices.
- Peak source current: 4A; Peak sink current: 6A.
- 3kVRMS isolation between input and output for safe high-voltage operation.
- Programmable dead-time control to reduce switching losses and prevent shoot-through.
- Built-in undervoltage lockout (UVLO) and disable function for enhanced protection.
- Ideal for motor drives, power converters, and industrial automation applications.
- Compatible Devices MOSFETs, IGBTs, SiC devices
- Peak Source Current 4A
- Peak Sink Current 6A
- Isolation Voltage 3kVRMS
- Dead-Time Control Programmable